Difference in Diffusion Length of Ga Atoms under As2 and As4 Flux in Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The surface diffusion length of Ga adatoms under As2 or As4 flux has been measured using V-grooved GaAs (001) substrates in molecular beam epitaxy. The diffusion length on the (001) surface toward the [110] direction, of Ga adatoms under As2 flux is about half of that under As4 flux. A smaller number of Ga atoms under As2 flux migrate to the (001) ridge surface from the sidewall surface than those under As4 flux. Furthermore, the Al0.6Ga0.4As layer on the V-grooved GaAs substrate grown under As2 flux preserve the V-shape, whereas the V-shape cannot be preserved during the growth under As4 flux. The GaAs quantum wire structures which have Al0.6Ga0.4As barrier layeres are fabricated under As2 flux.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-09-15
著者
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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TANUMA Yasuhiko
Shibaura Institute of Technology
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YONEI Kenji
Shibaura Institute of Technology
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Sugaya Takeyoshi
Electrotechnical Laboratory
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Sugaya Takeyoshi
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Nakagawa Tadashi
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Tanuma Yasuhiko
Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108, Japan
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