Miniband Base Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-04-20
著者
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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Nakagawa T
Riken
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Ohta Koji
Nikki Inspection Services Co. Ltd.
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Ohta K
Advanced Technology Research Laboratories Sharp Corporation
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OHTA Kimihiro
Electrotechnical Laboratory
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Ohta K
Nec Corp. Ibaraki Jpn
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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TAKAHASHI Naoki
Electrotechnical Laboratory
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KOJIMA Takeshi
Electrotechnical Laboratory
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
関連論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- Production of ^Zn Beam from RIKEN 18GHz Electron Cyclotron Resonance Ion Source
- Effect of Plasma Electrode Position of RIKEN 18 GHz Electron Cyclotron Resonance Ion Source on Beam Intensity of Highly Charged Ar Ions
- Enhancement of Ar^ Ion Beam Intensity from RIKEN 18 GHz Electron Cyclotron Resonance Ion Source by Optimizing the Magnetic Field Configuration
- Production of Highly Charged Ga Ions from Organic Metal Comppound Using the Liquid-He-Free Superconducting Electron Cyclotron Resonance Ion Source at RIKEN
- Effect of Magnetic Field Strength on Beam Intensity of Highly Charged Xe Ions from Liquid-He-Free Superconducting Electron Cyclotron Resonance Ion Source(Nuclear Science, Plasmas, and Electric Discharges)
- Enhancement of Ar^ Current Extracted from RIKEN 18GHz Electron Cyclotron Resonance Ion Source by Moving the Plasma Electrode toward the Resonance Zone : Nuclear Science, Plasmas, and Electric Discharges
- Production of Highly Charged Xe Ions from Liquid He Free Super Conducting Electron Cyclotron Resonance Ion Source
- Effect of Electrode for Producing the Highly Charged Heavy Ions from RIKEN 18 GHz Electron Cyclotron Resonance Ion Source
- Production of Highly Charged Xe ions from the RIKEN 18 GHz Electron Cyclotron Resonance Ion Source using a Biased Electrode
- The Effect of an Electrode on Plasma Potential Dip in RIKEN 18 GHz Electron Cyclotron Resonance Ion Source
- Upgrade of RIKEN 18 GHz Electron Cyclotron Resonance Ion Source Using an Electrode at Floating Potential
- Production of Multicharged Os Ion Beams from Organic Metal Compounds Using a RIKEN 18 GHz Electron Cyclotron Resonance Ion Source
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Crystal Structure of the Metastable State of Ferroelectric Lead Germanate
- Observation of the Crystallization Process from Amorphous PbTiO_3 and Pb_5Ge_3O_ by Atomic Force Microscopy
- D-4 Manufacturing Technology of High Resolution Probes for NDT
- Enhancement of Ultrasonic Testing Equipment Time Based Resolution by Synthetic Waveform Generator : Ultrasonic Microscopy and Nondestructive Testing
- Determination of Ion Confinement Time in RIKEN 18 GHz Electron Cyclotron Resonance Ion Source (ECRIS) under Pulsed Mode Operation
- Improvement of RIKEN 18 GHz Electron Cyclotron Resonance Ion Source using Aluminum Tube
- Effect of Plasma-Cathode Method on Production of Highly Charged Ions from Oxide in RIKEN 10-GHz Electron-Cyclotron-Resonance Ion Source
- Upgrade of RIKEN 10 GHz Electron Cyclotron Resonance Ion Source Using Plasma Cathode Method
- Mechanism of the Increase of Highly Charged Ion Intensity by use of an Electrode in the First-Stage Chamber of the RIKEN 10 GHz Electron Cyclotron Resonance Ion Source
- High Density Recording Capability of Laser-Assisted Magnetic Recording
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductuvely-Coupled Plasma
- Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
- Magnetocaloric Effect of Super-paramagnetic Nanocomposite Composed of Iron-Oxide and Silver
- Formation of Iron-Nitride/Silver Nanocomposites by Ammonia-Flow Method and Nitride Phase Identification by X-Ray Absorption Near-Edge Structure
- Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
- Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
- Ion Transport in Concentrated Electrolyte Solutions
- Refractive Index Ellipsoids of a Polyformal Magneto-Optical Memory Disk Substrate
- Optical Anisotropies in Modified Polycarbonates
- Formation of Very Thin Anodic Oxide of InSb
- Resonant Tunneling in Triple Barrier Diode under Pressure
- Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSb
- Resonant Magnetotunneling in AlGaAs/GaAs Triple Barrier Diodes : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Two Dimensional Electrons and Ions
- Stress-Optical Coefficients in Polycarbonates
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Hard Magnetic MnAl and MnBi Ribbons Made from Molten State by Rapid Cooling
- Characterization of a Longitudinally Pumped CW, Room-Temperature Operation of Tm^:YVO_4 Laser
- Far-Infrared Reflectance Spectra of Al_xGa_As/GaAs Superlattices for Various Al Mole Fractions
- Far-Infrared Reflectance Spectra of Heavily Doped p-GaAs for Various Hole Concentrations
- Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
- Liquid Phase Epitaxial Growth of Ga_x In_ Sb by Vertical Dipping Method
- Raman Scattering Spectra of the Folded Acoustic Phonon in Al_xGa_As/GaAs Superlattices for Various Al Mole Fractions
- Development of New Analytical System Using the Electron Cyclotron Resonance Ion Source and Heavy Ion Linear Accelerator
- Analysis of Raman Spectra from Heavily Doped p-GaAs
- High-Frequency Precise Characterization of Intrinsic FinFET Channel
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Difference in Diffusion Length of Ga Atoms under As2 and As4 Flux in Molecular Beam Epitaxy