Analysis of Raman Spectra from Heavily Doped p-GaAs
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概要
- 論文の詳細を見る
A theory of Raman scattering by both coupled LO phonon-plasmon (LO-PL)modes and surface "unscreened" LO phonons in a doped semiconductor is presentedwith a simple two-layer (surface depletion layer-bulk substrate) model. Effects of theoptical penetration depth and the depletion layer thickness on the line shape are exam-ined. The theory is applied to an analysis of Raman spectra from a (100) surface of p-GaAs, and reproduces experimental profiles very well. An analysis suggests that theobserved broad band near the transverse optical phonon frequency is ascribed to thelower branch of the coupled LO-PL modes..
- 社団法人日本物理学会の論文
- 1988-10-15
著者
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OHTA Kimihiro
Electrotechnical Laboratory
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HASEGAWA Akira
General Education Department, Niigata University
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Fukasawa Ryoichi
Graduate School Of Science And Technology
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Hasegawa Akira
General Education Department Niigata University
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