Raman Spectra of Confined LO Phonons in Single Heterostructure

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概要

• 論文の詳細を見る

• We present a theoretical description of the Raman spectra from longitudinal op-tical ([0) phonon modes confined in a heterostructure consisting of a thin surfacelayer on a semi-infinite substrate. The scattering cross section is derived by a dispersive continuum model for ionic displacement on the basis of classical response func-lion theory. The spectra calculated for GaAs/AlGaAs reveal that phonon confinement in GaAs layer leads to asymmetric feature in line shape as well as peak shifts ofthe GaAs-type modes. The observability of the confined LO modes via Raman studiesis discussed.

• 社団法人日本物理学会の論文
• 1987-10-15

著者

• Fukasawa R

  Communications Res. Lab. Ministry Of Posts And Telecommunications Kobe Jpn

• Fukasawa Ryoichi

  Graduate School Of Science And Technology

• Katayama Shin'ichi

  General Education Department

関連論文

• Far-Infrared Reflectance Spectra of Al_xGa_As/GaAs Superlattices for Various Al Mole Fractions
• Far-Infrared Reflectance Spectra of Heavily Doped p-GaAs for Various Hole Concentrations
• Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
• Analysis of Raman Spectra from Heavily Doped p-GaAs
• Raman Spectra of Confined LO Phonons in Single Heterostructure

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