Nanometer-Scale Surface Modification Using Scanning Tunneling Microscope (STM)-Based Lithography with Conductive Layer on Resist

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-06-15

著者

• Yonei K

  Shibaura Inst. Technol. Tokyo Jpn

• Yonei Kenji

  Department Of Electronic Engineering Shibaura Institute Of Technology

• OHTSUKA Kenichi

  Department of Electronic Engineering, Shibaura Institute of Technology

• Ohtsuka Kenichi

  Department Of Electronic Engineering Shibaura Institute Of Technology

関連論文

• Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
• Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
• Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
• Nanometer-Scale Surface Modification Using Scanning Tunneling Microscope (STM)-Based Lithography with Conductive Layer on Resist
• Parallel- and Radial-Current Stream-Line Type Metal-Contacts of Solar Cell : I-3: CHARACTERIZATION OF SOLAR CELLS

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