Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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ANDO Akira
National Institute for Fusion Science
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Ando Akira
Murata Mfg. Co. Ltd.
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Matsumoto K
Nippon Sanso Corp. Ibaraki Jpn
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
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MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
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MIKI Kazushi
Nanotechnology Research Institute-AIST
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SAKAMOTO Tetsuo
Institute of Industrial Science, The University of Tokyo
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SAKAMOTO Tsunenori
Electrotechnical Laboratory
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SAKAMOTO Kunihiro
Electrotechnical Laboratory
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Sakamoto K
Tohoku Univ. Miyagi Jpn
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ANDO Atsushi
Electrotechnical Laboratory (ETL)
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MIKI Kazushi
Electrotechnical Laboratory (ETL)
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Sakamoto Kunihiro
Electrotechnical Laboratory (etl)
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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Matsumoto K
Advanced Industrial Science And Technology:tsukuba University:crest
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Ando A
Murata Mfg. Co. Ltd.
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Miki K
Electrotechnical Laboratory (etl)
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Miki Kazushi
National Institute Of Materials Science (nims)
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Miki Kazushi
Aist
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Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
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Miki Kazushi
Electrotechnical Laboratory
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Sakamoto T
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
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Sakamoto Kenji
Institute Of Fluid Science Tohoku University
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Matsumoto K
Electrotechnical Laboratory
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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