Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-06-25
著者
-
FUKATSU Susumu
Graduate School of Arts and Sciences, The University of Tokyo
-
MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
-
MIKI Kazushi
Nanotechnology Research Institute-AIST
-
MIKI Kazushi
Electrotechnical Laboratory (ETL)
-
Sakamoto Kunihiro
National Institute Of Advanced Industrial Science And Technology (aist)
-
Miki K
Electrotechnical Laboratory (etl)
-
Miki Kazushi
National Institute Of Materials Science (nims)
-
Miki Kazushi
Aist
-
Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
-
Fukatsu Susumu
Graduate School Of Arts And Sciences The University Of Tokyo
-
MURATA Koichi
National Institute of Materials Science (NIMS)
-
YASUTAKE Yuhsuke
Graduate School of Arts and Sciences, The University of Tokyo
-
NITTOH Koh-ichi
National Institute of Materials Science (NIMS)
-
Yasutake Yuhsuke
Graduate School Of Arts And Sciences The University Of Tokyo
-
Murata Koichi
National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
-
Miki Kazushi
National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
-
Nittoh Koh-ichi
National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
- Control of Auger Recombination Rate in Si_Ge_x/Si Heterostructures
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Behaviors of surfactant atoms on Si(001) surface
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Optimization of the piezoresistive AFM cantilever design for using at cryogenic temperature
- Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments
- Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
- Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
- Scanning Tunneling Microscopy of Anisotropic Monatomic Steps on a Vicinal Si(001) - 2 × 1 Surface
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- Diminished nonradiative recombination in near-surface pseudomorphic Si_Ge_x/Si quantum wells
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Characterization of Highly Concentrated Bi Donors Wire-\delta-Doped in Si
- Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures
- Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Leakage Current Distribution of Cu-Contaminated Thin SiO2
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)