Diminished nonradiative recombination in near-surface pseudomorphic Si_<1-x>Ge_x/Si quantum wells
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
FUKATSU Susumu
Graduate School of Arts and Sciences, The University of Tokyo
-
Sugawara Yoshitaka
Japan Science And Technology Agency (jst)
-
Fukatsu Susumu
Graduate School Of Arts And Sciences The University Of Tokyo
-
KISHIMOTO Yosuke
Graduate School of Arts and Sciences, The University of Tokyo
-
AKAI Yasuo
Department of Pure and Applied Sciences, The University of Tokyo
-
Akai Yasuo
Department Of Pure And Applied Sciences The University Of Tokyo
-
Kishimoto Yosuke
Graduate School Of Arts And Sciences The University Of Tokyo
関連論文
- Control of Auger Recombination Rate in Si_Ge_x/Si Heterostructures
- Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
- Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe-Based Alloy Quantum Well : Semiconductors
- Diminished nonradiative recombination in near-surface pseudomorphic Si_Ge_x/Si quantum wells
- Characterization of Highly Concentrated Bi Donors Wire-\delta-Doped in Si
- Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots
- Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures