Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe-Based Alloy Quantum Well : Semiconductors
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概要
- 論文の詳細を見る
An enhancement of photoluminescence (PL) intensity was observed at room temperature in a SiGe/Si quantum well under continuous laser illumination. The laser-induced PL enhancement was found to be an irreversible process characterized by a time constant which decreases with increasing excitation power density. A modified defect reduction model based on recombination-enhanced defect reaction is invoked to interpret the PL enhancement in terms of an improvement in the crystal quality of quantum well layers induced by laser radiation.
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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Hippo Daihei
Graduate School Of Arts And Sciences The University Of Tokyo
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Sugawara Yoshitaka
Graduate School Of Arts And Sciences The University Of Tokyo
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KISHIMOTO Yosuke
Graduate School of Arts and Sciences, The University of Tokyo
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KAWAMOTO Kiyoshi
Graduate School of Arts and Sciences, The University of Tokyo
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FUKATSU S.
Graduate School of Arts and Sciences, The University of Tokyo
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Kishimoto Yosuke
Graduate School Of Arts And Sciences The University Of Tokyo
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Kawamoto Kiyoshi
Graduate School Of Arts And Sciences The University Of Tokyo
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Fukatsu S.
Graduate School Of Arts And Sciences The University Of Tokyo:japan Science And Technology Corporatio
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Fukatsu S.
Graduate School Of Arts And Sciences The University Of Tokyo
関連論文
- Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe-Based Alloy Quantum Well : Semiconductors
- Diminished nonradiative recombination in near-surface pseudomorphic Si_Ge_x/Si quantum wells
- Voltage-Controlled Emission Wavelength Switching in a Pseudomorphic Si1-xGex/Si Double Quantum Well