NAGATA Toshiyuki | Electrotechnical Laboratory, MITI
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概要
関連著者
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林 康明
京都工芸繊維大学大学院
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HAYASHI Yutaka
Electrotechnical Laboratory
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林康 明
京都工芸繊維大学工芸学部電子情報工学科
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林 康明
京都工芸繊維大学大学院工芸科学研究科
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Hayashi Yuzo
Irie Koken Co. Ltd.
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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YOSHIMOTO Tomomi
Electrotechnical Laboratory, MITI
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NAGATA Toshiyuki
Electrotechnical Laboratory, MITI
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Yoshimoto T
Hokkaido Tokai Univ. Sapporo Jpn
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Nagata T
Department Of Biological Sciences Graduate School Of Science University Of Tokyo
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Nagata Toshiyuki
Dept. Of Biological Sciences Graduate School Of Science. Univ. Of Tokyo
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
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KOJIMA Takeshi
Electrotechnical Laboratory
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
著作論文
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices