Yoshimoto T | Hokkaido Tokai Univ. Sapporo Jpn

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概要

• 同名の論文著者
• Hokkaido Tokai Univ. Sapporo Jpnの論文著者

関連著者

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (elt)

• Yoshimoto T

  Hokkaido Tokai Univ. Sapporo Jpn

• Matsumoto Kazuhiko

  Electrotechnical Laboratory

• 林 康明

  京都工芸繊維大学大学院

• HAYASHI Yutaka

  Electrotechnical Laboratory

• 林康 明

  京都工芸繊維大学工芸学部電子情報工学科

• 林 康明

  京都工芸繊維大学大学院工芸科学研究科

• Matsumoto K

  Electrotechnical Lab. Ibaraki‐kenn Jpn

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (etl)

• Hayashi Yuzo

  Irie Koken Co. Ltd.

• Matsumoto Kazuhisa

  Sumitomo Electric Industries Ltd.

• YOSHIMOTO Tomomi

  Electrotechnical Laboratory, MITI

• NAGATA Toshiyuki

  Electrotechnical Laboratory, MITI

• Nagata T

  Department Of Biological Sciences Graduate School Of Science University Of Tokyo

• Nagata Toshiyuki

  Dept. Of Biological Sciences Graduate School Of Science. Univ. Of Tokyo

• Kojima Tetsuya

  Department Of Electrical Engineering School Of Engineering Nagoya Univeristy

• Matsumoto Kazuhiko

  Advanced Industrial Science And Technology:tsukuba University:crest

• KOJIMA Takeshi

  Electrotechnical Laboratory

• Kojima T

  Department Of Electrical Engineering School Of Engineering Nagoya Univeristy

• SAKAMOTO Kunihiro

  Electrotechnical Laboratory

• Sakamoto Kunihiro

  Electrotechnical Laboratory Miti

• Yoshimoto Tomomi

  School Of Engineering Hokkaido Tokai University

• SAKATA Toshimiti

  School of Engineering, Department of Electronic and Information Engineertng, Hokkaido Tokai Universi

• Sakata Toshimiti

  School Of Engineering Department Of Electronic And Information Engineertng Hokkaido Tokai University

• MATSUMOTO Kazuhiko

  Electrotechnical Laboratory, MITI

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著作論文

• pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
• Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
• GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices

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