Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Blocking Voltage of 3300V (Special Issue : Solid State Devices and Materials)

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概要

• 論文の詳細を見る

著者

• Miura Naruhisa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Imaizumi Masayuki

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Sumitani Hiroaki

  Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan

• Hino Shiro

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

• Hamada Kenji

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

• Oomori Tatsuo

  R&D Partnership for Future Power Electronics Technology (FUPET), Minato, Tokyo 105-0001, Japan

• Kawakami Tsuyoshi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

関連論文

• Preparation of Platinum Palladium Monoxide Pt_Pd_xO Thin Films
• Electrical Characterization of Au/p-ZnSe Structure
• Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
• Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn_Cd_xS Thin Film Electroluminescent Devices
• Several Blue-Emitting Thin-Film Electroluminescent Devices
• Eleetroluminescence of ZnF_2 Thin-Films Doped with Rare-Earth Ions
• Strong Ultraviolet-Emitting ZnF_2:Gd Thin Film Electroluminescent Device
• Room Temperature Nb-Based Single-Electron Transistors
• Room Temperature Nb-Based Single-Electron Transistors
• Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
• Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
• A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy(the IEEE International Conference on SISPAD '02)
• TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET(the IEEE International Conference on SISPAD '02)
• A Simplified Dopant Pile-Up Model for Process Simulators(Regular Section)
• Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering
• A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
• Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroiluminescent Devices Prepared by Two Targets pulse Electron Beam Evaporation(Special Issue on Electronic Displays)
• Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process (Special lssue on SISPAD'99)
• High-Luminance Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroluminescent Devices
• Transient Behavior in ZnS:TbF_x Thin-Film Electroluminescent Devices Excited by Very Short Pulse
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
• Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
• Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
• Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
• Single-Electron Tunneling through Amorphous Carbon Dots Array
• Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique
• Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
• Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
• Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
• Electronic Interaction between Metal Additives and Tin Dioxide in Tin Dioxide-Based Gas Sensors : Surfaces, Interfaces and Films
• Shuttle Activation Annealing of Implanted Al in 4H-SiC
• 4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
• Shuttle Activation Annealing of Implanted Al in 4H-SiC
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
• Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000$\bar{1}$) by SiH4-Added Ar Anneal
• Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
• Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal--Oxide--Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V
• Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes (Special Issue : Solid State Devices and Materials)
• Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Blocking Voltage of 3300V (Special Issue : Solid State Devices and Materials)

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