Sumitani Hiroaki | Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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概要
- Sumitani Hiroakiの詳細を見る
- 同名の論文著者
- Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japanの論文著者
関連著者
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Sumitani Hiroaki
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nakata Shuhei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NAKAKI Yoshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Imaizumi Masayuki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Nakao Yukiyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oomori Tatsuo
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Nagae Akemi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakamura Yu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Konishi Kazuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Toyoda Yoshihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Hino Shiro
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Hamada Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oomori Tatsuo
R&D Partnership for Future Power Electronics Technology (FUPET), Minato, Tokyo 105-0001, Japan
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Kawakami Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Tanaka Takanori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Konishi Kazuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Tanaka Takanori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Toyoda Yoshihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakaki Yoshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Kawakami Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakata Shuhei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
著作論文
- Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
- Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal--Oxide--Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V
- Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes (Special Issue : Solid State Devices and Materials)
- Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Blocking Voltage of 3300V (Special Issue : Solid State Devices and Materials)