Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
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概要
- 論文の詳細を見る
The relationship between stacking faults and the position of the leakage current inside a triangular defect was analyzed. Triangular defects are categorized into two types on the basis of the current--voltage (I--V) characteristics. It was found that stacking faults (SFs) of the 3C structure inside a triangular defect increase leakage current at a reverse bias voltage as well as forward current at a low bias voltage, while SFs of the \mathrm{SF}(4,2) structure inside a triangular defect do not lead to deterioration of device performance in this case.
- 2013-04-25
著者
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Nakata Shuhei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NAKAKI Yoshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Nakao Yukiyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oomori Tatsuo
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Nagae Akemi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakamura Yu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Konishi Kazuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Tanaka Takanori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Toyoda Yoshihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Sumitani Hiroaki
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Konishi Kazuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Toyoda Yoshihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakata Shuhei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Tanaka Takanori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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