Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes (Special Issue : Solid State Devices and Materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Nakata Shuhei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NAKAKI Yoshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Nakao Yukiyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oomori Tatsuo
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Nagae Akemi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakamura Yu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Sumitani Hiroaki
Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan
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Konishi Kazuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Toyoda Yoshihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakaki Yoshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Tanaka Takanori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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- Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
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- Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes (Special Issue : Solid State Devices and Materials)
- Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Blocking Voltage of 3300V (Special Issue : Solid State Devices and Materials)