Imaizumi Masayuki | Advanced Technology R&d Center Mitsubishi Electric Corp.

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著作論文

Electrical Characterization of Au/p-ZnSe Structure
Shuttle Activation Annealing of Implanted Al in 4H-SiC
4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
Shuttle Activation Annealing of Implanted Al in 4H-SiC
Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000$\bar{1}$) by SiH4-Added Ar Anneal
Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal--Oxide--Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V
Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Blocking Voltage of 3300V (Special Issue : Solid State Devices and Materials)

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