Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000$\bar{1}$) by SiH4-Added Ar Anneal
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概要
- 論文の詳細を見る
Surface morphologies of aluminum-implanted 4H-SiC$(000\bar{1})$ after a high-temperature anneal have been investigated in comparison with those of 4H-SiC(0001). The high-temperature anneal above 1450°C in pure Ar at 25000 Pa has been found to result in extreme roughness, which is not seen for 4H-SiC(0001). By the SiH4-added Ar anneal at 1500°C, a remarkably flat surface and an electrical activation rate of more than 90% are attained.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-01-15
著者
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Takami Tetsuya
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ohtsuka Ken-ichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ozeki Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Fujihira Keiko
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tarui Yoichiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Imaizumi Masayuki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Takami Tetsuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Ohtsuka Ken-ichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Tarui Yoichiro
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Fujihira Keiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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