Significant Improvement in Ba_<1-x>K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-06-15
著者
-
TAKAMI Tetsuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Wada Yoshiki
System Lsi Development Center Mitsubishi Electric Corp.
-
Wada Y
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Takami T
Mitsubishi Electric Corp. Hyogo Jpn
-
Takami Tetsuya
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
OZEKI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Ozeki T
Sophia Univ. Tokyo Jpn
-
Ozeki Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Kuroda Ken'ichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
WADA Yukihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Ozeki T
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Ozeki T
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
-
Kuroda Ken′ichi
Advanced Teach. R & D Center, Mitsubishi Electric Corp.
-
Wada Yukihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
関連論文
- DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77 K
- Ba_K_xBiO_3 Grain Boundary Junctions on a MgO Bicrystal Substrate
- Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- In-plane Orientation and Coincidence Site Lattice Relation of Bi_2Sr_2CaCu_2O_x Thin Films Formed on Highly Mismatched (001) YAG Substrates
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
- (01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
- Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
- Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
- Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
- Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
- Microscopic Study on (11n)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy
- BiSrCaCuO Thin Film Grown on SrTiO_3 Substrate with Off-Oriented (110) Surface
- Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation
- Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal
- Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen
- Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films
- (11n)-Oriented BiSrCaCuO Thin Film Formed on SrTiO_3(110) Substrate by RF Magnetron Sputtering
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
- Ultra Low Power Operation of Partially-Depleted SOI/CMOS Integrated Circuits (Special Issue on Low-power LSIs and Technologies)
- SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Effect of Growth Temperature on Superconducting Phases of As-Grown BiSrCaCuO Thin Film Formed by RF Magnetron Sputtering
- Transfer Function Matrix Measurement of AWG Multi/Demulti-Plexers (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Optical Path Cross-Connect System Using Matrix Wavelength Division Multiplex Scheme (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Transfer Function Matrix Measurement of AWG Multi/Demulti-Plexers (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Optical Path Cross-Connect System Ushing Matrix Wavelength Division Multiplex Scheme (Joint Special Issue on Photonics in Switching : Systems and Devices)
- A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer(Special Issue on Microwave and Millimeter Wave Technology)
- Bragg Grating Filter Synthesis Using Fourier Transform with Iteration(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Aiming for SIS Mixers Using Ba_<1-x>K_xBiO_3 Bicrystal Junctions (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
- Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O Trilayer Junctions Using a Polishing Technique
- YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors
- Improvement in Ba_K_xBiO_3 Grain Boundary Junctions by Ar^+ Beam Irradiation
- Significant Improvement in Ba_K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
- Fabrication of Full High-$T_{\text{c}}$ Superconducting YBa2Cu3O7-x Trilayer Junctions Using a Polishing Technique
- Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000$\bar{1}$) by SiH4-Added Ar Anneal