The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers(Active Devices and Circuits)(<Special Section>Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
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概要
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The maximum operating region of a SiGe HBT has been experimentally investigated by a direct microwave wave form measurement. Dynamic RF load lines are used as a probe to detect the limit of the RF operation. For the first time, it is found that SiGe HBTs operate beyond the conventional BV_<ceo>, while GaAs HBTs cannot survive at that voltage. The conventional BV_<ceo> limits the average Vc of the maximum load lines, but has no influence on the peak voltage. Another BV_<ceo> measured with a voltage generator is proposed to represent the irreversible avalanche breakdown instead of the conventional one. A pulsed breakdown measurement is also performed to reveal the time constant of the phenomena.
- 2004-05-01
著者
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Inoue A
Microwave Device Development Department Mitsubishi Electric Corporation
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Ishikawa Takahide
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Nakatsuka Shigenori
Microwave Device Development Department Mitsubishi Electric Corporation
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INOUE Akira
High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation
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NAKATSUKA Shigenori
Miyoshi Electronics Corporation
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MATSUDA Yoshio
High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation
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Matsuda Yoshio
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Inoue Akira
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Inoue Akira
High Frequency & Optical Device Works R&d Dept. Mitsubishi Electric Corporation
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