Large Signal Evaluation of Nonlinear HBT Model
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概要
- 論文の詳細を見る
The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.
- （社）電子情報通信学会の論文
- 2008-07-01
著者
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Watanabe Shinsuke
High Frequency & Optical Device Works R&d Dept. Mitsubishi Electric Corporation
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Angelov Iltcho
Chalmers University Of Technology Microwave Electronics Laboratory
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INOUE Akira
High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation
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Angelov Iltcho
Chalmers Univ. Of Technol. Goeteborg Swe
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Inoue Akira
High Frequency & Optical Device Works R&d Dept. Mitsubishi Electric Corporation
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