Data-Driven Implementation of Highly Efficient TCP/IP Handler to Access the TINA Network
スポンサーリンク
概要
- 論文の詳細を見る
This paper discusses and clarifies effectiveness of data-driven implementation of protocol handling system to access TINA(Telecommunications Information Networking Architecture)network and internet.TINA is a networking architecture that achieves networking services and management ubiquitously for users and networks.Many TINA related ACTS(Advanced Communication Technologies and Services)projects have been organized in Europe.In Japan, The TINA Trial(TTT)to achieve ATM network management and services based on TINA architectures was done by NTT and several manufactures from April 1997 to April 1999.In these studies and trials, much effort is devoted to development of software based on service architecture and network architecture being standardized in TINA-C(TINA Consortium).In order to achieve TINA environment universally in customers and network sides, we have to consider how to deploy TINA environment onto user side and how to use access transmission capacity as efficiently as possible.Recent technology can easily achieve application and environment downloading from the network side to user side by use of e.g., JAVA. In accessing the network, there are several possible bottlenecks in information exchange in customer side such as PC processing capability, access protocol handling capability, intra-house wiring bandwidth.Authors, in parallel with TINA software architecture study, have been studying versatile requirements for hardware platform of TINA network.In those studies, we have clarified that the stream-oriented data-driven processor authors have been studying and developing have high reliability, high multiprocessing and multimedia information processing capability.Based on these studies, this paper first shows Von Neumann-based protocol handler is ineffective in case of multiprocessing through mathematical and emulation studies.Then, we show our data-driven protocol handling can effectively realize access protocol handling by emulation study.Then, we describe a result of first step of implementation of data-driven TCP-IP protocol handling.This result proves our TCP-IP hub based on data-driven processor is applicable not only for TINA/CORBA network but normal internet access.Finally, we show a possible customer premises network configuration which resolves bottleneck to access TINA network through ATM access.
- 社団法人電子情報通信学会の論文
- 2000-06-25
著者
-
Nishikawa Hiroaki
School Of Biology-oriented Science And Technology Kinki University
-
NISHIKAWA Hiroaki
the School of Biology-Oriented Science and Technology, Kinki University
-
Nishikawa H
Osaka Univ. Osaka Jpn
-
Nishikawa Hiroaki
College Of Medical Technology & Nursing University Of Tsukuba
-
Nishikawa H
The Institute Of Scientific And Industrial Research Osaka University
-
Nishikawa Hiroaki
The Author Is With Institute Of Information Science And Electronics University Of Tsukuba
-
Ishii H
Ntt Corp. Musashino‐shi Jpn
-
Nishikawa H
School Of Biology-oriented Science And Technology Kinki University
-
ISHII Hiroshi
The author is with NTT Information Sharing Platform Labs.
-
INOUE Yuji
The author is with Research and Develoment Headquarters, NTT DATA Corporation
-
Inoue Yuji
The Author Is With Research And Develoment Headquarters Ntt Data Corporation
関連論文
- Preparation of Freestanding Hydroxyapatite Membranes with Excellent Biocompatibility and Flexibility
- Designing Coplanar Superconducting Lumped-Element Bandpass Filters Using a Mechanical Tuning Method( Superconducting High-frequency Devices)
- Protein Adsorption on Patterned Hydroxyapatite Thin Films Fabricated by Pulsed Laser Deposition
- Mechanically Tunable High-Temperature Superconducting Microwave Filter With Large Shift of Resonant Frequency : Superconductors
- Preparation of Superconducting Magnetostatic Wave (MSW) Devices Consisting of High-T_c Superconductor (HTS)/Perovskite-Type Manganite Heterostructures: Application of Pr_Ca_MnO_3 as a MSW Waveguide : Superconductors
- Structural Equation Modeling of the Relationship of Bone Mineral Density and Its Risk Factors in Japanese Women
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
- On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
- Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
- Studies of Electron Beam Evaporated SiO_2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
- Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
- Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
- Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
- Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
- Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Model Analysis of Anomalies in Highly Oriented Pyrolytic Graphite Images by Scanning Tunneling Microscope in Air
- Model Analysis of Current-Mode Images of Highly Oriented Pyrolytic Graphite by Scanning Tunneling Microscope in Air
- Observation of Surface Corrugation of Highly Oriented Pyrolylic Graphite by Scanning Tunneling Microscope in Air
- Design Philosophy of a Data-Driven Processor: Q-p
- Geographical Pattern of Malignant Neoplasm by Cluster Analysis Using Standardized Mortality Ratios (SMRs) in Ibaraki Prefecture, Japan
- An epidemiological study of the relationship between diet in the past and bone mineral density based on a survey of women aged 50 years and over in two public health centers, Ibaraki Prefecture
- Laser Ablation of Alkaline Earth Metals Investigated by Time-of-Flight Mass Spectroscopy : Ion Desorption by Core-Electron Excitation
- Laser-Ablation Mechanism of Sr Metal Investigated by Time-of-Flight Mass Spectroscopy
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
- Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
- High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
- Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Data-Driven Implementation of Highly Efficient TCP/IP Handler to Access the TINA Network
- Data-Driven Fault Management for TINA Applications (Special Issue on Network Operations and Management)
- A Study on Surge and Rotating Stall in Axial Compressors (A Summary of the Measuremet and Fundamental Analysis Method)
- Behavior of EHL Films in Cyclic Squeeze Motion
- Geographical Pattern of Malignant Neoplasm by Cluster Analysis Using Standardized Mortality Ratios (SMRs) in Ibaraki Prefecture, Japan
- Fabrication of a Large Hydroxyapatite Sheet
- Behavior of EHL Films in Reciprocating Motion
- Time Zone Analysis on IIJ Network Traffic for Malicious Botnet Activities
- Time Zone Analysis on IIJ Network Traffic for Malicious Botnet Activities
- Time Zone Analysis on IIJ Network Traffic for Malicious Botnet Activities