Numerical Study on Shape Transformation of Silicon Trenches by High-Temperature Hydrogen Annealing
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概要
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We have studied shape transformation of micron-sized trenches on Si substrates during high temperature hydrogen annealing, performing numerical simulations based on Mullins' theory. We have considered evaporation-condensation and surface diffusion as mass transport mechanisms causing shape transformation. The simulation allowing only surface diffusion reproduces well the observed micron-scale aspects of shape transformation by hydrogen annealing at 1000–1150°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
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IWASAKI Hiroshi
The Institute of Scient4fic and Industrial Research, Osaka University
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Sudoh Koichi
The Institute Of Scient4fic And Industrial Research Osaka University
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Shimizu Ryosuke
Device Technology Laboratory Fuji Electric Advanced Technology Co. Ltd.
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Kuribayashi Hitoshi
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Hiruta Reiko
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Shimizu Ryosuke
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Sudoh Koichi
The Institute of Science and Industrial Research, Osaka University
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