Kuribayashi Hitoshi | Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan

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Kuribayashi Hitoshi
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
IWASAKI Hiroshi
The Institute of Scient4fic and Industrial Research, Osaka University
Sudoh Koichi
The Institute Of Scient4fic And Industrial Research Osaka University
Shimizu Ryosuke
Device Technology Laboratory Fuji Electric Advanced Technology Co. Ltd.
Hiruta Reiko
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Sudoh Koichi
The Institute of Science and Industrial Research, Osaka University
Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
Sugahara Yoshiyuki
Device Technology Laboratory Fuji Electric Advanced Technology Co. Ltd.
Ogino Masaaki
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Sugahara Yoshiyuki
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Shimizu Ryosuke
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
Sudoh Koichi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Iwasaki Hiroshi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

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