Formation of Silicon-on-Nothing Structures with Extremely Flat Surfaces
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概要
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We have investigated annealing conditions for producing silicon-on-nothing (SON) structures with extremely flat surfaces by high temperature annealing of high-aspect-ratio hole arrays fabricated on Si(001) surfaces. In the phase immediately after SON structures are formed through the surface-diffusion driven evolution induced by high temperature annealing, the SON surfaces are rough. We show that additional annealing after the SON structure formation at high temperatures, where preferential sublimation from step edges occurs, effectively removes the surface roughness to yield SON structures with extremely flat (001) surfaces with fairly low step densities.
- 2013-07-25
著者
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Naito Muneyuki
Department Of Chemistry Konan University
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Higuchi Kohei
Maenaka Human-sensing Fusion Project Erato Japan Science And Technology Agency
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NAKAMURA Jun
Corporate Research & Development Center, Yamaha Corporation
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Maenaka Kazusuke
Maenaka Human-Sensing Fusion project, ERATO, Japan Science and Technology Agency, Himeji, Hyogo 671-2280, Japan
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Sudoh Koichi
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Sudoh Koichi
The Institute of Science and Industrial Research, Osaka University
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