Reconditioning-Free Polishing for Interlayer-Dielectric Planarization
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概要
- 論文の詳細を見る
In chemical mechanical polishing (CMP) using a colloidal silica slurry with a pH of 10-11 for interlayer-dielectric (ILD) planarization, the removal rate of the oxide film drops off rapidly because the pad surface becomes flat during a CMP process. Thus we must recondition the polishing pad surface in order to obtain the rough polishing pad surface. In result, we can maintain a constant removal rate of the oxide film during the life time of the pad. We clarified that the alteration of the polishing pad surface was caused by the KOH solution in a conventional slurry. We also found that our newly developed MnO_2 slurry could prevent the alteration of the polishing pad surface in reconditioning-free CMP.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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ARIMOTO Yoshihiro
Fujitsu Laboratories Ltd.
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Nakamura Ko
Fujitsu Laboratories Ltd.
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KISHII Sadahiro
Fujitsu Laboratories Ltd.
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岸井 貞浩
(株)富士通研究所
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Kishii Sadahiro
Device Integration Technology Laboratories, Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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岸井 貞浩
(株) 富士通研究所
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