The Effect of Total Reactor Pressure on GaInSb Grown on Gd_3Ga_5O_12 Substrate by Metal Organic Chemical Vapor Deposition

概要

論文の詳細を見る
To investigate the possibility of improving the crystal quality of a GaInSb layer grown on a Gd_3Ga_5O_12 substrate by metal organic chemical vapor deposition (MOCVD), experimental studies were carried out on the effect of the total reactor pressure. The lattice constant was affected by the pressure. The effect of reducing the pressure was dependent on the growth temperature. In a low-temperature regime, the lattice constant increased, and at high temperature it decreased, as the pressure was reduced. The growth rate increased as the pressure was reduced in both temperature regimes. Upon reduction of the pressure, the range of growth conditions which gives a preferentially (111)-oriented GaInSb layer became narrow.
社団法人応用物理学会の論文
1995-07-15