Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-01-15
著者
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
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- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- Automatically-Controlled C-Band Wavelength Conversion with Constant Output Power Based on Four-Wave Mixing in SOA's(Lasers, Quantum Electronics)
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
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- Theory of Exciton Spontaneous Emission in Semiconductor Mesoscopic Quantum Disks Embedded in a Planar Microcavity
- Threshold Current and Its Temperature Dependence in InGaAsP/InP Strained Quantum-Well Lasers under a Magnetic Field
- Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
- The Acceptor Level of Fe in In_ Ga_ P
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)