Kawaguchi Kenichi | Fujitsu Laboratories Limited
スポンサーリンク
概要
関連著者
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Kawaguchi Kenichi
Fujitsu Laboratories Limited
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Kawaguchi Kenichi
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ekawa Mitsuru
Fujitsu Laboratories Ltd.
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Kuramata Akito
Fujitsu Laboratories Limited
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Ebe Hiroji
Institute Of Industrial Science (iis) The University Of Tokyo
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Ekawa Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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AKIYAMA Tomoyuki
Fujitsu Laboratories Ltd.
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Akiyama Tomoyuki
Qd Laser Inc.
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KAWAGUCHI Kenichi
Fujitsu Limited and Fujitsu Laboratories, Limited
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YASUOKA Nami
Fujitsu Limited and Fujitsu Laboratories, Limited
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Sugawara Mitsuru
Institute Of Industrial Science (iis) The University Of Tokyo
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Uetake Ayahito
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Ebe Hiroji
Institute of Industrial Science (IIS), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Kuramata Akito
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Akiyama Tomoyuki
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Akiyama Tomoyuki
QD Laser Inc., Kudankita, 1-14-17 Chiyoda-ku, Tokyo 102-0073, Japan
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Kawaguchi Kenichi
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Yasuoka Nami
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sugawara Mitsuru
Institute of Industrial Science (IIS), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ekawa Mitsuru
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
著作論文
- Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers