Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH_4OH/H_2O_2/H_2O
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-12-15
著者
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青山 肇
技術研究組合超先端電子技術開発機構(aset)超微細sr露光技術研究室(pxl研究室)
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青山 肇
株式会社半導体先端テクノロジーズ
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Aoyama Hajime
Fujitsu Laboratories Ltd.
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NAKAJIMA Anri
Fujitsu Laboratories Ltd.
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KAWAMURA Kazuo
Fujitsu Laboratories Ltd.
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Kawamura K
Kochi Univ. Kochi Jpn
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