Nakamura Ryou | Fujitsu Limited Advanced Lsi Development Div.
スポンサーリンク
概要
関連著者
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Nakamura Ryou
Fujitsu Limited Advanced Lsi Development Div.
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FUKUTOME Hidenobu
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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NAKAMURA Ryou
Advanced LSI Development Division, FUJITSU Limited
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NAKAMURA Ryou
FUJITSU Ltd.
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Saiki Takashi
New Energy And Industrial Technology Development Organization (endo) Alcohol Production Head Office
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USUJIMA Akihiro
FUJITSU LIMITED
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Saiki Takashi
Fujitsu Limited Advanced Lsi Development Div.
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Tanaka Takuji
Fujitsu Ltd.
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TANAKA Takuji
Advanced LSI Development Division, FUJITSU Limited
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GOTO Ken-ichi
Advanced LSI Development Division, FUJITSU Limited
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SATOH Shigeo
Advanced LSI Development Division, FUJITSU Limited
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GOTO Ken-ichi
FUJITSU Ltd.
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SATOH Shigeo
FUJITSU Ltd.
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Tanaka Takuji
Advanced Lsi Development Division Fujitsu Limited
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Satoh Shigeo
Fujitsu Laboratories Ltd.
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Hori Mitsuaki
Advanced Lsi Development Division Fujitsu Limited
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Goto Ken-ichi
Fujitsu Laboratories Ltd.
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SAIKI Takashi
FUJITSU LIMITED, Advanced LSI development div.
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Fukutome Hidenobu
Advanced CMOS Technology Lab, Silicon Technologies Laboratories, Fujitsu Laboratories Ltd., 50 Fuchi
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Saiki Takashi
Advanced LSI Development Division, Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Arimoto Hiroshi
Advanced LSI Development Division, Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Arimoto Hiroshi
Advanced Lsi Development Division Fujitsu Limited
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Usujima Akihiro
Fujitsu Limited Advanced Lsi Development Div.
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Saiki Takashi
Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Nakamura Ryou
Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Usujima Akihiro
Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Fukutome Hidenobu
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
著作論文
- Analysis and modeling of size dependent mobility enhancement due to mechanical stress
- Direct measurement of the offset spacer effect on the carrier profiles in sub-50nm p-MOSFETs
- Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy
- Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors