Atomic-Scale Negative Differential Conductance Observed at B-Type Surface Steps on the Si(001)-2×1 Surface (<Special Issue> Quantum Dot Structures)
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概要
- 論文の詳細を見る
We have found that the I-V characteristics at a rebonded B-type step on a Si(001)-2×1 surface show negative differential conductance (NDC), as a result of a detailed study of the atomic and electronic structures of rebonded B-type steps using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The rebonded B-type step is characteristically observed with bright protrusions in an empty-state STM image. From the differetial conductance spectra at the rebonded B-type step, the NDC is caused by a strong enhancement in the local density of the antibonding state.
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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Yao Takafumi
Institute For Materials Research Tohoku University
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YOSHIMURA Masamichi
Toyota Technological Institute
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Yao Takafumi
Institute For Materials Research Tohoku University:joint Research Center For Atom Technology Nationa
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KOMURA Takuji
Institute for Materials Research, Tohoku University
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Komura Takuji
Institute For Materials Research Tohoku University
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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YOSHIMURA Masamichi
Toyota Tech. Inst.
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