Photoluminescence Properties of Selectively Ag-Photodoped Al-ZnSe at Room Temperature

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Selective Ag photodoping at room temperature (RT) has been succesfully performed on Al-doped n-type ZnSe grown by molecular beam epitaxy (MBE). Some 6-nm-thick Ag islands with a square shape (2mm × 2mm) are deposited on the as-grown Al-ZnSe, which in turn is illuminated with a 325nm HeCd laser at RT and the photoluminescence (PL) characteristics are measured in real time. The self-activated (SA) emission shown in Ag-undoped Al-ZnSe shifts to a shorter wavelength ΔE(I_2) 〜 +60meV) via a series of processes of Ag photodoping and subsequent annealing in the MBE chamber. The emission bands centered at 2.245eV and 2.146eV distinctly show a blue shift with the increase of the PL-excitation power, which can be assigned to a donor-to-acceptor (DA) pair transition. That is, the SA bands in Al-ZnSe appear to be converted into DA bands by Ag photodoping. The coloring is controlled to some degree by adjustment of the percentage of the Ag-doped area included in the PL-excitation spot. For example, a 40% spectrum, which corresponds to one obtained from an excitation spot consisting of an Ag doped area of 〜40% and an Ag undoped area of 〜60%, appears yellowish-white to the naked eye. We believe that it is possible to realize a patterned ZnSe-based white-light emitter with Ag islands of micrometer size using the conventional UV-lithography and lift-off processes and RT-Ag photodoping. [DOI: 10.1143/JJAP.41.1265]
社団法人応用物理学会の論文
2002-03-15

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