Investigation of Charge Trapping in a SiO_2/Si System with a Scanning Capacitance Microscope
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概要
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The local electrical properties of a SiO_2/Si structure is investigated using a scanning capacitance microscope (SCaM). The sample investigated in this study was p-type Si with a 10-nm-thick thermal oxide layer. The capacitance measurement reveals the local variation of capacitance, which reflects the electrical properties of the Si substrate, SiO_2/Si interface and SiO_2 layer. We have injected charge into the SiO_2/Si sample. The localvariation and time evolution of the stored charge is clearly detected in a noutdestructive manner by the SCaM.
- 社団法人応用物理学会の論文
- 1998-06-30
著者
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Yao Takafumi
Institute For Materials Research Tohoku University
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Tomiye H
Institute For Materials Research Tohoku University
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TOMIYE Hideto
Institute for Materials Research, Tohoku University
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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