Nakazawa Hideki | Faculty Of Science And Technology Hirosaki University
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概要
関連著者
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Nakazawa Hideki
Faculty Of Science And Technology Hirosaki University
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Mashita Masao
Faculty of Science and Technology, Hirosaki University
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Mashita Masao
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Nakazawa Hideki
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Suemitsu Maki
Center For Interdisciplinary Research Tohoku University
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Enta Yoshiharu
Faculty Of Science And Technology Hirosaki University
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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NAKAZAWA Hideki
Faculty of Science and Technology,Hirosaki University
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Yasui Kanji
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Asai Yuhki
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Narita Yuzuru
Kyusyu Institute of Technology, Kitakyushu 804-8550, Japan
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MAKINO Hisao
Institute for Materials Research, Tohoku University
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Koo Bon-heun
Department Of Ceramic Science And Engineering Changwon National University
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Endoh Tetsuo
Research Institute Of Electrical Communication Tohoku University
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KAJIKAWA Yasutomo
Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Eng
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TAKATA Masasuke
Nagaoka University of Technology
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YAO Takafumi
Institute for Materials Research, Tohoku University
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Yao Takafumi
Institute For Materials Research Tohoku University
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Makino Hisao
Institute For Materials Research Tohoku University
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Konno Atsushi
Center For Interdisciplinary Research Tohoku University
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ITO Takashi
Center for Information and Sciences, Nippon Medical School
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NUMATA Toshifumi
Faculty of Science and Technology,Hirosaki University
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Makino Hisao
Institute For Material Research Tohoku University
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FUKADA Yusuke
Nagaoka University of Technology
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Mashita M
Research And Development Center Toshiba Corporation
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Nakazawa H
Aoyama Gakuin Univ. Kanagawa Jpn
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Mikami Takamasa
Faculty of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan
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Mikami Takamasa
Faculty Of Science And Technology Hirosaki University
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Akahane Tadashi
Nagaoka Univ. Technol. Nagaoka‐shi Jpn
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Abe Toshimi
Tohoku Institute Of Technology
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Numata Toshifumi
Faculty Of Science And Technology Hirosaki University
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Kajikawa Yasutomo
Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi
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Kajikawa Yasutomo
Department Of Electric And Control Systems Engineering Interdisciplinury Faculty Of Science And Engi
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Itoh Takashi
Center For Information And Sciences Nippon Medical School
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Kinoshita Takeshi
Faculty Of Engineering Yamaguchi University
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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Suemitsu Maki
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Katoh Shigeki
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Narita Yuzuru
Kyusyu Institute of Technology, Kitakyusyu 804-8550, Japan
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Kuroki Yuichiro
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Enta Yoshiharu
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Kudo Masahiro
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Konno Atsushi
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Endou Tetsuro
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Ito Takashi
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
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Fukada Yusuke
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Akahane Tadashi
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
著作論文
- Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
- Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
- Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source
- Growth of GaN Films by Hot-Mesh Chemical Vapor Deposition Using Ruthenium-Coated Tungsten Mesh
- Effects of Substrate Bias Voltage on Structural, Mechanical and Tribological Properties of Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Methane and Argon Gases
- Comparison of Film Properties between Hydrogenated and Unhydrogenated Diamond-Like Carbon Films Prepared by Radio-Frequency Magnetron Sputtering