Priority of the Mn Deposition Rate in Reactive Evaporation Conditions
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概要
- 論文の詳細を見る
Manganese (Mn) oxide films used in lithium secondary batteries were prepared using the reactive evaporation method. One of the problems of using this method is that the manganese evaporant in the crucible suffers oxidation in an oxygen atmosphere. This deteriorates the Mn deposition rate with increasing the deposition run. A separator was introduced in the bottom of the Mn crucible. It could successfully isolate Mn evaporant from incoming oxygen atoms. The film properties depend on the oxygen flow rate, Mn deposition rate, and substrate temperature. These three parameters correlate closely with each other. The importance of Mn deposition rate compared to the rest of the parameters was recognized. The Mn deposition rate is governed by two parameters. One is the source temperature, and the other is the aperture size of the separator. The Mn3O4 films with a hausmannite structure can be prepared under the conditions of Mn deposition rate of 3–10 Å/s, separator aperture size of 6 mm$\phi$, source temperature of 960°C, wall temperature of 900°C and oxygen flow rate of 5 sccm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-12-15
著者
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Fujiyasu Hiroshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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SHIMADA Takeyoshi
Department of Electrical and Electronic Engineering, Shizuoka University
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MORIMOTO Keiichiro
Department of Electrical and Electronic Engineering, Shizuoka University
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Isai Masaaki
Department Of Electrical And Electronic Engineering Shizuoka University
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Ito Yasumitsu
Miyakoda Electronics Technical Center Suzuki Motor Corporation
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Ichikawa Hiroshi
Department Of Electrical And Electronic Engineering Shizuoka University
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Morimoto Keiichiro
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Isai Masaaki
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Shimada Takeyoshi
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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