Tunneling Spectroscopic Studies of Metal-Insulator-Amorphous GeTe Junction

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概要

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• The I-V and G-V characteristics of an Al-Al_2O_3-Amorphous GeTe film are studied through tunneling spectroscopy. The conductance is expressed as G=G_o+A_n(V-V_<bi>)^n at room temperature, where G_o is a constant, n〜1.7, 2.4 and 3.1 and V_<bi>=V_<bf>(0.24 V) and=V_<br>(0.14 V) forward and reverse biases, respectively. The energy gap (mobility gap) of amorphous GeTe is obtained by analyzing the tunnel data on the assumption that the band bending effects are small. The obtained energy gap (0.76 eV) is nearly consistent with the value obtained by electrical resistivity (0.70 eV) or that by optical absorption measurement (0.71 eV). It is also ascertained experimentally that the increase in the conductance well width at liquid nitrogen temperature is due to the high series resistance of the amorphous GeTe film.

• 社団法人応用物理学会の論文
• 1974-02-05

著者

• Fujiyasu Hiroshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University

• Itoh Sadao

  Department Of Electronics Faculty Of Engineering Shizuoka University

• Yamashita Kiichi

  Department Of Electronics Faculty Of Engineering Shizuoka University:(present Address)central Resear

• KOBAYASHI Isamu

  Department of Electronics, Faculty of Engineering, Shizuoka University

• Kobayashi Isamu

  Department Of Electronics Faculty Of Engineering Shizuoka University

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