酸素ジェットによるシリコンの増速熱酸化〔英文〕 (電子材料技術の新展開<特集>)
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概要
- 論文の詳細を見る
- 1995-06-05
著者
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Haneji Nobuo
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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Hoh Koichiro
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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KAKIMOTO Nobuo
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National Universit
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TOYODA Takayuki
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National Universit
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Kakimoto Nobuo
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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Toyoda Takayuki
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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鳳 紘一郎
Department of Electronic Engineering Faculty of Engineering The University of Tokyo
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- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- Accuracy Improvement of the Pipelined AD Converter by the Adjustment Using Its Chaotic Output
- Integrated Random-Signal Source Utilizing CMOS Chaos Multivibrator
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- A Unified First Return Map Model for Various Types of Chaos Observed in the Thyristor
- 酸素ジェットによるシリコンの増速熱酸化〔英文〕 (電子材料技術の新展開)
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- A Compactly Integrated Random-Signal Source Using Chaos Multivibrator
- Analysis of Chaos in Capacitance-npn-Transistor Pair and Its Application to Neuron Element
- Emulation of Quantum Computing by Parallel Finite Impulse Responses
- Estimation of Cotunneling in Single-Electron Logic and Its Suppression
- 16-Qubit Quantum-Computing Emulation Based on High-Speed Hardware Architecture
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition