Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Nabatame Toshihide

  Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva

• Nabatame T

  Aist Tsukuba Jpn

• Nabatame Toshihide

  Mirai-aset Advanced Industrial Science And Technology (aist)

• Nabatame Toshihide

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Ota Hiroyuki

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Fujiwara Hideaki

  Mirai-aset Aist

• Toriumi Akira

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• KADOSHIMA Masaru

  MIRAI, Association of Super-Advanced Electronics Technologies (ASET)

• MISE Nobuyuki

  MIRAI, Association of Super-Advanced Electronics Technologies (ASET)

• SATAKE Hideki

  MIRAI, Association of Super-Advanced Electronics Technologies (ASET)

• Kadoshima Masaru

  Mirai Association Of Super-advanced Electronics Technologies (aset)

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Satake Hideki

  Mirai Association Of Super-advanced Electronics Technologies (aset)

• TAKABA Hiroyuki

  MIRAI-ASET, AIST

• Takaba Hiroyuki

  Mirai-aset Aist

• Satake Hideki

  Mirai-aset Aist

• Mise Nobuyuki

  Mirai-aset Aist

• Ota Hiroyuki

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi Akira

  Mirai-asrc Aist

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Ota Hiroyuki

  MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan

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