Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Yasuda Naoki

  Mirai-aset Aist

• Nabatame Toshihide

  Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva

• Ota Hiroyuki

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Tominaga Koji

  Mirai-aset Aist

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Yasuda Tetsuji

  Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria

• Yasuda Naoki

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• Morita Yukinori

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• KADOSHIMA Masaru

  MIRAI, Association of Super-Advanced Electronics Technologies (ASET)

• MIGITA Shinji

  MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie

• MIYATA Noriyuki

  MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and

• Kadoshima Masaru

  Mirai Association Of Super-advanced Electronics Technologies (aset)

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

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