Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-11-30

著者

• Yasuda Naoki

  Mirai-aset Aist

• Ota Hiroyuki

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• MIZUBAYASHI Wataru

  MIRAI-ASRC

• Yasuda Naoki

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• HISAMATSU Hirokazu

  MIRAI, Association of Super-Advanced Electronics Technologies (ASET)

• Hisamatsu Hirokazu

  Mirai-aset Aist

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

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