Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Mizuno Tomohisa

  Mirai-aist

• TAKAGI Shinichi

  MIRAI, Advanced Semiconductor Research Center - National Institute of Advanced Industrial Science an

• Takagi Shinichi

  Mirai-aist

関連論文

• Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method
• Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition
• Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime

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