Ishiwara Hiroshi | Precision & Intelligence Laboratory Tokyo Institute Of Technology
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概要
関連著者
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Graduate School of Science
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
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Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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Asano Tanemasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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Yamamoto H
Sharp Corp. Nara Jpn
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Yamamoto H
College Of Science And Technology Nihon University
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Lee Hee
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Lee Hee
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Lee Hee
Department Of Electrical Engineering And Computer Science Kaist
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YOON Sung-Min
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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YAMAMOTO Hiroshi
Department of Macromolecular Science, Graduate School of Science, Osaka University
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Moon Bum
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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KANEMARU Seigo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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SAITOH Shuichi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Saitoh Shuichi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Ohmi Shun-ichiro
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Yamamoto Hiroshi
Department Of Energy Engineering And Science Nagoya University
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TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Fujii Gen
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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Kim Kwang-ho
Department Of Semiconductor Engineering Cheongju University
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Aizawa Kouji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kim J‐d
Department Of Electrical And Computer Engineering Kanazawa University
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Kim Je-deok
Department Of Semiconductor Engineering Cheong-ju University
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TSUTSUI Kazuo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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ORIHARA Kouzo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Orihara Kouzo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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KURITA Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kurita Yoichiro
Tokyo Institute Of Technology Precision & Intelligence Laboratory
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Kim Kwang-ho
Department Of Semiconductor Engineering Cheong-ju University
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Kim Kwang-ho
Department Of Architecture Inha University
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kurita Yuji
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Tsutsui K
Sony Corp. Tokyo Jpn
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Nakamura Ryohei
Hitachi Metals Ltd.
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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Yamamoto Hiroshi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kim Je-deok
Department Of Electrical And Computer Engineering Kanazawa University
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Shimamura Toshishige
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Fukao Kazuichi
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address):kanagawa Works
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Kurita Y
Chuo Univ. Tokyo Jpn
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Tsutsui Kazuo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ARIMOTO Yoshihiro
Memory Device Lab., Fujitsu Laboratories Ltd.
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJII Gen
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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YOSHIHARA Makoto
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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OKAMOTO Takeo
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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ITANI Kensuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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SHOURIKI Shigeto
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Fujisaki Y
R&d Association For Future Electron Devices
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NAKAMURA Ryo-ichi
Precision & Intelligence Lab. Tokyo Institute of Technology
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RICARD Herve
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ricard Herve
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Itani Kensuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Oh Jeong-hee
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shouriki Shigeto
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Yamamoto Hiroshi
Graduate School Of Environmental Science Hokkaido University
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ANDO KOJI
Department of Surgery and Science, Graduate School of Medical Sciences, Kyushu University
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SATO Yasuhiro
Department of Applied Physics, Hokkaido University
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AIZAWA Kouji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Lee M
National Inst. Advanced Interdisciplinary Res.(nair) Tsukuba Jpn
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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Moon B‐k
Infineon Technol. Yokohama Jpn
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Kim D‐y
Etri Daejeon Kor
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Oh J‐h
Tokyo Inst. Technol. Tokyo Jpn
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KOINUMA Hideomi
Tokyo Institute of Technology
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Okamoto Kenji
Department Of Applied Physics Osaka University
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Koinuma Hideomi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Koinuma Hideomi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Koinuma Hideomi
Department Of Industrial Chemistry University Of Tokyo
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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KATO Kazumi
National Institute of Advanced Industrial Science and Technology (AIST)
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YOSHIMOTO Mamoru
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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KAWASAKI Masashi
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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LEE Myung
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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SAIKI Koihiro
Department of Chemistry, The University of Tokyo
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ATANASSOV Rosen
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Saiki Koihiro
Department Of Chemistry The University Of Tokyo
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Atanassov Rosen
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address) Departmen
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Miyazaki Kenzo
Department Of Engineering Physics Faculty Of Engineering Kyoto University
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Moriwaki Masashi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Kim Kwang
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
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Koinuma Hideomi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kawasaki Masashi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kato Kazumi
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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Tamura Masao
Central Research Laboratory
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Tamba Akihiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address)hitachi Re
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Hoko Hiromasa
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Park Byung-eun
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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TOKUYAMA Takashi
Central Research Laboratory
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Jimbo Takehito
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Sawaoka A
Tokyo Inst. Technol. Tokyo Jpn
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Sawaoka Akira
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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WAKABAYASHI Hitoshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MIYAZAKI Keizo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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FUKAO Kazuichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Miyazaki K
Tokyo Inst. Technol. Yokohama Jpn
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Fukao K
Precision And Intelligence Laboratory Tokyo Institute Of Technology : (present Address) Kanagawa Wor
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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TANISAKE Noriaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kamei T
Department Of Communications Engineering National Defense Academy
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SORIMACHI Yoshio
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tanisake Noriaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Sugii Toshihiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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MIYAZAKI Kazuhiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Kamei Tatsuya
The Authors Are With The Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tabuchi Yoshiaki
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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HASEGAWA Satoshi
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering
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TAMURA Tetsuro
Silicon Technology Lab., FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
O Ishiwara Lab.
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ISHIWARA Hiroshi
F-project, FUJITSU LABORATORIES LTD.
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KIJIMA Takeshi
R&D Association for Future Electron Devices
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FUJISAKI Yoshihisa
R&D Association for Future Electron Devices
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Yoshimoto Mamoru
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Wakabayashi H
Taiyo Yuden Co. Ltd. Gunma Jpn
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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MOON Burn-Ki
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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IMADA Shogo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITSU Eisuke
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kim Chul-ju
Electronics Of Engineering Seoul City University
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RICARD Herve
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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AIZAWA Kouji
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Yoshihara Makoto
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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TOKUMITS Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ando Koji
Department Of Applied Chemistry Muroran Institute Of Technology
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Kato Kazumi
National Institute Of Advanced Industrial Science And Technology
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Okamoto Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology,
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Okamoto Takeo
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ueno Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
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OH Jeong-Hee
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Mori Hiroyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology:central Research Laboratory Hita
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Sakai I
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address) Hewlett-packar
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Okamoto Tomoyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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KIM Duck-Young
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Sorimachi Yoshio
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address) Technolog
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Ando Koji
Department Of Chemistry The University Of Tokyo
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Sato Yasuhiro
Department Of Chemistry The University Of Tokyo
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SAKAI Ikuo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ando Koji
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Ishiwara Hiroshi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Hasegawa Satoshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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JYOKYU Katsuyoshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Jyokyu Katsuyoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address)matsushita Elec
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ARIMOTO Yoshihiro
F-project, FUJITSU LABORATORIES LTD.
著作論文
- Formation of Ferroelectric BaMgF_4 Films on GaAs Substrates
- Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Partial Switching Kinetics of Ferroelectric PbZr_xTi_O_3 Thin Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- Growth of Crystalline SrTiO_3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties
- Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
- Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Electrical Properties of Ferroelectric BaMgF_4 Films on Si Substrates ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
- Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
- Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
- Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films
- Lattice Parameter Control of Epitaxially Grown Hexagonal LaF_3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF_3
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Preparation of PbTiO_3 Films Utilizing Self-Control Mechanism of Stoichiometric Composition in Dual-Beam Vacuum Evaporation Method
- Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped with P and Ge Atoms
- Epitaxial Growth of SrTiO_3 Films on Si (100) Substrates Using a Focused Electron Beam Evaporation Method
- Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-Incorporated Si Films
- Preparation and Characterization of PZT Thin Films on CeO_2(111)/Si(111) Structures
- X-Ray and Photolumineseence Characterization of a Strain-Free GaAs-on-Si Structure Formed by Anrnealing under Ultrahigh Pressure
- Formation of Conductive SrVO_3 Films on Si Substrates
- Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage
- Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer
- Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Roles of Buffer Layers in Epitaxial Growth of SrTiO_3 Films on Silicon Substrates