Kim J‐d | Department Of Electrical And Computer Engineering Kanazawa University

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概要

• KIM Je-Deokの詳細を見る
• 同名の論文著者
• Department Of Electrical And Computer Engineering Kanazawa Universityの論文著者

関連著者

• Kim J‐d

  Department Of Electrical And Computer Engineering Kanazawa University

• Kim Je-deok

  Department Of Semiconductor Engineering Cheong-ju University

• Kim Je-deok

  Department Of Electrical And Computer Engineering Kanazawa University

• ISHIWARA Hiroshi

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• Kim Kwang-ho

  Department Of Semiconductor Engineering Cheongju University

• Ishiwara Hiroshi

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology

• Kim Kwang-ho

  Department Of Semiconductor Engineering Cheong-ju University

• Kim Kwang-ho

  Department Of Architecture Inha University

• Ishiwara H

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• 笹木 敬司

  北海道大学電子科学研究所

• HATA Tomonobu

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• Sasaki Kimihiro

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Hata Toshio

  Electrotechnical Laboratory:tokai University

• KAWAGOE Shinya

  Department of Electrical and Computer Engineering, Kanazawa University

• Hata T

  Kanazawa Univ. Kanazawa Jpn

• Hata Tomonobu

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Kawagoe Shinya

  Department Of Electrical And Computer Engineering Kanazawa University

• KIM Kwang-Ho

  Department of Semiconductor Engineering, Cheong-Ju University

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著作論文

• Target for a Pb(Zr,Ti)O_3 Thin Film Deposited at a Low Temperature Using a Quasi-Metallic Mode of Reactive Sputtering
• Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
• Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing

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