Ishiwara Hiroshi | Tokyo Inst. Of Technol. Yokohama Jpn
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概要
関連著者
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Kijima Takeshi
Research And Development For Future Electron Devices
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KAWASHIMA Yoshihito
Tokyo Institute of Technology
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Idemoto Yasushi
Science University Of Tokyo
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KATO Kazumi
National Institute of Advanced Industrial Science and Technology (AIST)
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Kato Kazumi
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Hoko Hiromasa
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Kijima T
Research And Development For Future Electron Devices:tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Tabuchi Yoshiaki
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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HASEGAWA Satoshi
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering
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TAMURA Tetsuro
Silicon Technology Lab., FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Kato Kazumi
National Institute Of Advanced Industrial Science And Technology
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Kikuchi Shin
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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Kikuchi Shin
R&d Association For Future Electron Devices
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Hasegawa Satoshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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SONG Young-Uk
Tokyo Institute of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Konkuk Univ.
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Liao Min
Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kawashima Yoshihito
Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
著作論文
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
- Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- PREFACE
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates