Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
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概要
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Si-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared on a Pt/Ti/SiO2/Si(100) structure by an RF magnetron sputtering method. The films were deposited at temperatures below 100°C to suppress the evaporation of Bi atoms and crystallized at 800°C in air. The Si/Ta atomic ratio in the sputtering targets was changed in the range from 0 to 0.1. It was found, for the sample with the Si/Ta ratio of 0.05, that its remanent polarization ($2P_{\text{r}} = 20$ μC/cm2) and the shape of its hysteresis loop in the polarization vs electric field ($P$-$E$) characteristic were not degraded compared to those of a pure SBT sample. It was also found that the leakage current characteristics were improved in the Si-added SBT films. Finally, the Si-added samples were annealed in oxygen ambient at 7 atm and further improvements in the leakage current and imprint characteristics were achieved.
- Japan Society of Applied Physicsの論文
- 2005-01-10
著者
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Kikuchi Shin
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Kikuchi Shin
R&d Association For Future Electron Devices
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- PREFACE
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
- Improvement of Ferroelectric Properties in Mo-Substituted Bi3.35La0.75Ti3O12 Films by Optimization of Heating Rate
- Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 Ferroelectric Thin Films
- A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates
- Preparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- Significant Enhancement of Bi3.45La0.75Ti3O12 Ferroelectricity Derived by Sol-Gel Method