Sol-Gel Derived Ferroelectric Pb(Zr_<1-x>Ti_x)O_3-SiO_2-B_2O_3 Glass-Ceramic Thin Films Formed at Relatively Low Annealing Temperatures
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概要
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Frontier collaborative Research Center, Tokyo Institute of Technology / Frontier collaborative Research Center, Tokyo Institute of TechnologyFerroelectric PZT(PbZr_<0.52>Ti_<0.48>O_3)-5 mol%SiO_2-1mol%B_2O_3 glass-ceramic thin films were fabricated by sol-gel and rapid thermal annealing (RTA) techniques on Pt/Ti/SiO_2/Si(100) substrates at a relatively low annealing temperature of 650℃. The perovskite-phase PZT crystallites grew in the films and were preferentially oriented in the (111) direction. The PZT crystallization temperature was lower in the PZT-SiO_2-B_2O_3 system, compared to that in PZT-SiO_2 and pure PZT. The dielectric constant and loss, remnant polarization, and leakage current of the films annealed at temperatures ranging from 650 to 700℃ were lower than those of pure PZT.
- 社団法人応用物理学会の論文
- 2001-09-30
著者
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Wang Xusheng
Frontier Collaborative Research Center Tokyo Institute Of Technology
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