Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1 V
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概要
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Sr-deficient and praseodymium-substituted SrBi2Ta2O9 (SPrBT) films with a saturated remanent polarization of as low as 1 V were prepared on Pt/Ti/SiO2/Si structures using the sol-gel method. The maximum remanent polarization ($P_{\text{r}}$) value of the SPrBT films was obtained using a Sr0.8Pr0.13Bi2Ta2O9 precursor solution. The $P_{\text{r}}$ and coercive field saturation values of a 123-nm-thick SPrBT film annealed at 850°C were 7.8 μC/cm2 and 37 kV/cm, respectively, and a high $P_{\text{r}}$ value of 6.7 μC/cm2 was obtained at an applied voltage of 1 V. The SPrBT films showed only a 2% fatigue after a polarization switching of $5 \times 10^9$ cycles, which is similar to that of Sr-deficient and Bi-excess SrBi2Ta2O9 films.
- Japan Society of Applied Physicsの論文
- 2003-07-15
著者
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Aizawa Koji
Precision And Interlligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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