Write and Read-Out Operations of Novel 1T2C-Type Ferroelectric Memory Cells with an Array Structure : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
We fabricated a 1T2C-type ferroelectric memory array structure with 2 × 3 cells on a silicon-on-insulator (SOI) substrate. Each cell in the array is composed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and two ferroelectric capacitors with the same area. This type of memory has unique features such as nonvolatile data storage, nondestructive data read-out, and high-density integration based on the scaling rule. It was found that binary data could be correctly stored into a selected cell of the memory array after optimizing the gate SiO_2 thickness of the MOSFET. It was also found that the written data could be correctly read out with a current ratio as large as 10 for "0" and "1" data.
- 社団法人応用物理学会の論文
- 2001-05-01
著者
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Yoon Sung-min
R & D Association For Future Electron Devices Co Frontier Collaborative Research Center Tokyo In
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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YOON Sung-Min
R & D Association for Future Electron Devices, co Frontier Collaborative Research Center, Tokyo Inst
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