A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
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概要
- 論文の詳細を見る
The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the reponse for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.
- 社団法人電子情報通信学会の論文
- 2001-06-01
著者
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Ogata N
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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OGATA Nobuhito
R&D Association for Future Electron Devices
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