Low-Temperature Synthesis of SrBi_2Ta_2O_9 Thin Films with Bi_2SiO_5-Containing Seed Layers : Surfaces, Interfaces, and Fiims
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概要
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Ferroelectric SrBi_2Ta_2O_9 (SBT) thin films were synthesized by a sol-gel method using an SBT-Bi_2Si_O_5 composite seed layer to lower the annealing temperature. The crystallization temperatures were 50 to 100℃ lower than those required for conventional SBT films. The films annealed at 600℃ showed obvious ferroelectric hysteresis loops, and those annealed at 625℃ or above showed well-saturated hysteresis loops and excellent electric properties. The remanent polarization (2Pr) and coercive field (2Ec) of this film annealed at 625℃ were 8.5 μC/cm^2 and 121 kV/cm at an applied voltage of 5 V, respectively. This film also showed a leakage current density lower than 10^<-7> A/cm^2 up to 250 kV/cm and no fatigue property up to 10^<10> switching cycles.
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Wang Xusheng
Frontier Collaborative Research Center Tokyo Institute Of Technology
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